Gallium antimonide
From Infogalactic: the planetary knowledge core
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| Names | |
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| IUPAC name
Gallium(III) antimonide
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| Other names
Gallium antimonide
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| Identifiers | |
12064-03-8  |
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| ChemSpider | 3436915 |
| Jmol 3D model | Interactive image |
| PubChem | 4227894 |
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| Properties | |
| GaSb | |
| Molar mass | 191.483 g/mol |
| Density | 5.614 g/cm3 |
| Melting point | 712 °C (1,314 °F; 985 K) |
| insoluble | |
| Band gap | 0.726 eV (300 K) |
| Electron mobility | 3000 cm2/(V*s) (300 K) |
| Thermal conductivity | 0.32 W/(cm*K) (300 K) |
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Refractive index (nD)
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3.8 |
| Structure | |
| Sphalerite, cF8 | |
| F-43m, No. 216 | |
| Vapor pressure | {{{value}}} |
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Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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 verify (what is  ?) |
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| Infobox references | |
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm.
Applications
GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
See also
External links
- properties listed at NSM, Ioffe Institute.
- National Compound Semiconductor Roadmap at the Office of Naval Research
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